^,mi-condactoi ^pi , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn rf transistor MMBR951L description ? low noise ? high current-gain bandwidth product applications ? designed for use in high gain , low noise small-signal amplifiers. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc= 75"c junction temperature storage temperature range value 20 10 1.5 100 0.322 150 -55-150 unit v v v ma w -c ?c _ sot- 2 3 package h,m ?:-mi t t i marking 3 c * i u! i u._l kh / \ lp m ,k i u 1 : base 2: emitter 3: collector h ml dim a b ," l. d f i- h k l m mm win 0.37 1.19 2.10 0.89 1.7s 2.65 1, 1.0 0. 15 0.076 max 0.51 1. 10 2.50 1.05 2,05 3.05 1.30 0.61 0. i7s m * nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor MMBR951L electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo iebo icbo hfe cob fr i s2le i 2 i s21e | 2 gu max gumax nf parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter cutoff current collector cutoff current dc current gain output capacitance current-gain ? bandwidth product insertion power gain insertion power gain maximum unilateral gain maximum unilateral gain noise figure conditions lc= 0.1ma; ib=0 lc=0.1ma;le=0 veb= 1v; lc= 0 vcb=10v; ie=0 lc= 5ma ; vce= 6v |e=0 ; vcb= 10v; f= 1mhz lc= 30ma ; vce= 6v; f= 1ghz lc= 30ma ; vce= 6v;f= 1 .oghz lc= 30ma ; vce= 6v;f= 2. oghz lc= 30ma ; vce= 8v;f= 1 .oghz lc= 30ma ; vce= 8v;f= 2. oghz lc=5ma;vce=6v;f=1ghz; rg= 50 q min 10 20 50 typ. 0.45 8 12.5 7.0 14 8 1.9 max 0.1 0.1 200 1.0 2.8 unit v v ua ua pf ghz db db db db db
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